Recent Publications:

Kashem, M.T.B., Scoggin, J., Woods, Z., Silva, H. and Gokirmak, A. (2023), Modeling Reset, Set, and Read Operations in Nanoscale Ge2Sb2Te5 Phase-Change Memory Devices Using Electric Field- and Temperature-Dependent Material Properties. Phys. Status Solidi RRL 2200419.

O. Maksimov, K. Hansen, H. B. Bhandari, G. Wicker, H. Mousa, S. Ilhom, H. Silva, "Novel applications of ZnTe as an ovonic threshold switching and as a phase change material," in MRS Advances, 2023,

A. H. Talukder, B. Smith, M. Akbulut, F. Dirisaglik, H. Silva and A. Gokirmak, "Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs," in IEEE Transactions on Electron Devices, 2022, doi: 10.1109/TED.2022.3184906.

M.T.B. Kashem, S. Muneer, L. Adnane, F. Dirisaglik, A. Gokirmak, and H. Silva, "Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge2Sb2Te5," ECS Transactions108(1), p.29, 2022, doi: 10.1149/10801.0029ecst

M.T.B. Kashem, J. Scoggin, H. Silva, and A. Gokirmak, "Finite Element Modeling of Thermoelectric Effects in Phase Change Memory Cells," ECS Transactions108(1), p.3, 2022, doi: 10.1149/10801.0003ecst

R. S. Khan, F. Dirisaglik, A. Gokirmak, and H. Silva , "Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation", Appl. Phys. Lett. 116, 253501, 2020, doi: 10.1063/1.5144606
R. S. Khan, A. H. Talukder, F. Dirisaglik, H. Silva, and A. Gokirmak, “Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress,” arXiv Prepr. arXiv2002.12487, pp. 1–6, 2020,