Recent Publications:
A. Talukder, M. Kashem, M. Hafiz, R. Khan, F. Dirisaglik, H. Silva, A. Gokirmak, Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation Appl. Phys. Lett. 124, 263501 (2024). https://doi.org/10.1063/5.0196842
Talukder, A. H., Kashem, M. T. B., Khan, R., Dirisaglik, F., Gokirmak, A., & Silva, H. (2024). Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures. ECS Journal of Solid State Science and Technology, 13(2), 025001. doi.org/10.1149/2162-8777/ad2332
Kashem, M.T.B., Scoggin, J., Woods, Z., Silva, H. and Gokirmak, A. (2023), Modeling Reset, Set, and Read Operations in Nanoscale Ge2Sb2Te5 Phase-Change Memory Devices Using Electric Field- and Temperature-Dependent Material Properties. Phys. Status Solidi RRL 2200419. doi.org/10.1002/pssr.202200419
O. Maksimov, K. Hansen, H. B. Bhandari, G. Wicker, H. Mousa, S. Ilhom, H. Silva, "Novel applications of ZnTe as an ovonic threshold switching and as a phase change material," in MRS Advances, 2023, doi.org/10.1557/s43580-023-00508-2.
A. H. Talukder, B. Smith, M. Akbulut, F. Dirisaglik, H. Silva and A. Gokirmak, "Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs," in IEEE Transactions on Electron Devices, 2022, doi: 10.1109/TED.2022.3184906.
M.T.B. Kashem, S. Muneer, L. Adnane, F. Dirisaglik, A. Gokirmak, and H. Silva, "Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge2Sb2Te5," ECS Transactions, 108(1), p.29, 2022, doi: 10.1149/10801.0029ecst
M.T.B. Kashem, J. Scoggin, H. Silva, and A. Gokirmak, "Finite Element Modeling of Thermoelectric Effects in Phase Change Memory Cells," ECS Transactions, 108(1), p.3, 2022, doi: 10.1149/10801.0003ecst