MRS Spring 2014 – San Francisco

Ali, Faruk, Adam and Zack are planning to be at the MRS next week in San Francisco

Oral Presentations:

BB12.02, Narrow and Short Channel Bulk Si MOSFET with Body Accumulation through Side-Gates, Mustafa  Bilal  Akbulut, Faruk  Dirisaglik, Adam  Cywar, Azer  Faraclas, Douglas  Pence, Jyotica  Patel2, Steven  Steen, Ron  Nunes, Helena  Silva, Ali  Gokirmak

HH2.08, Modeling of Phase Change Memory Devices Using a Dynamic Crystal Density Approach, Zachary  Woods, Ali  Gokirmak

HH3.02, Effect of Baseline Voltage on the Set Dynamics of Phase Change Memory Devices, Kadir  Cil, Gokhan  Bakan, Zoila  Jurado, Zachary  Woods, Faruk  Dirisaglik, Mustafa  Bilal  Akbulut, Yu  Zhu, Chung  Lam, Ali  Gokirmak, Helena  Silva.

HH5.06, High Speed, High Temperature Electrical Characterization of Meta-Stable Phases and Crystallization Dynamics of Ge2Sb2Te5, Faruk  Dirisaglik, Gokhan  Bakan, Zoila  Jurado, Lindsay  Sullivan, Sadid  Muneer, Mustafa  Akbulut, Kadir  Cil, Yu  Zhu, Chung  Lam, Helena  Silva, Ali  Gokirmak


P6.18, Melting a Wire At One End: High-Temperature Thermoelectric Transport via Generation-Transport-Recombination of Minority Carriers in Highly Doped Semiconductors, Ali  Gokirmak, Gokhan  Bakan, Niaz  Khan, Helena  Silva

HH6.01, Simultaneous Seebeck and Electrical Resistivity Characterization of Ge2Sb2Te5 Thin Films, L’Hacene  Adnane, Ali  Gokirmak, Helena  Silva

HH6.04, Dynamic Crystallization Model for Ge2Sb2Te5 Nanostructures, Adam  Cywar, Sean  Fischer, Ali  Gokirmak

HH6.07, Impact of Heater Material on Thermoelectric Heating and Cooling in Phase Change Memory Cells, Azer  Faraclas, Ali  Gokirmak, Helena  Silva, Adam  Cywar

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And congrats to Azer too!

Azer Faraclas (MS Spring 2014, expected) got an offer from Analog Devices and is planning to start beginning of June. Congratuations and best wishes to Azer!

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Recent Publications

Please check out our recent publications:

A. Faraclas, G. Bakan, L. Adnane, F. Dirisaglik, N. Williams, A. Gokirmak and H. Silva, “Modeling of thermoelectric effects in phase change memory cells,” IEEE Trans. on Electron Devices, 61, 2, 372-387, 10.1109/TED.2013.2296305 (2014).

M. Trombetta, N. Williams, S. Fischer, A. Gokirmak, H. Silva, “Finite element electrothermal modeling of nanocrystalline phase-change materials using a mesh-based crystallinity approach,” Electronic Letters 50, 2, pp. 100-101, DOI:  10.1049/el.2013.2253 (2014).

H. Silva, A. Faraclas, A. Gokirmak, Phase-change memories and electrothermal modeling, in Nanoscale Semiconductor Memories: Technology and Applications, CRC Press, edited by Santosh K. Kurinec and Krzysztof Iniewski, 2013.



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New publications

Nadim’s “Computational Analysis of Rupture Oxide Phase Change Memory Cells”, IEEE Trans. on Electron Devices 60, 5, 1649 – 1655 (2013) 10.1109/TED.2013.2255130.

Kadir’s “Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride,” Thin Solid Films, available online April 2013;

and Sean’s “Percolation transport and filament formation in nanocrystalline silicon nanowires,” Journal of Applied Physics, 113, 164902 (2013)

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Azer and Nick presented their poster at the 2012 IEEE Device Research Conference (Penn State, June 18-20):

A. Faraclas, N. Williams, A. Gokirmak, H. Silva, “Comparison of Instantaneous Crystallization and Metastable Models in Phase Change Memory Cells,” 2012 IEEE Device Research Conference (2012).

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Undergraduate students Rebecca Nowak, Lingyi Zhang, Jonathan Rarey, Tom Capuano and Michael Trombetta joined our lab for the summer. (NSF REU Program).

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APS March Meeting in Boston:

L. Lucera, L. Adnane, K. Cil, V. Manthina, A. Agrios, H. Silva, A. Gokirmak, Light emission from electrically stressed ZnO nanorods, Americal Physical Society March Meeting 2012, (2012).

L. Adnane, F. Dirisaglik, M. Akbulut, Y. Zhu, C. Lam, A. Gokirmak, H. Silva, High Temperature Seebeck Coefficient and Electrical Resistivity of GeSbTe Thin Films, Americal Physical Society March Meeting 2012, (2012).

Continue reading

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The list of our oral and poster presentations to be delivered in MRS Fall 2011 in Boston, MA:

S. Fischer, N. E. Williams, C. Osorio, A. Gokirmak, H. Silva, “Finite Element Simulations of Current-Induced Filamentations in Nanocrystalline Silicon,” Mat. Res. Soc. Fall Meeting, vol. BB20.2, 2011. (undergraduate student work)

M. Wennberg, A. King, A. Cywar, F. Dirisaglik, A. Gokirmak, H. Silva, “Nanosecond voltage pulsing and DC voltage sweeping on nano-scale Ge2Sb2Te5wires,” Mat. Res. Soc. Fall Meeting, vol. BB4.6, 2011. (undergraduate student work)

G. Bakan, A. Gokirmak, H. Silva, “Thermoelectric Transport under Large Temperature Gradients in Self-Heated Silicon Microwires,” Mat. Res. Soc. Fall Meeting, vol. W6.10, 2011.

K. Cil, Y. Zhu, C. Lam, H. Silva, “The Effect of Substrate and Film Thickness on Phase Transition Temperatures of GST Thin Films,” Mat. Res. Soc. Fall Meeting, vol. SS7.54, 2011.

L. Adnane, N. E. Williams, A. Gokirmak, H. Silva, “High Temperature Seebeck Coefficient and Resistivity Measurement Setup,” Mat. Res. Soc. Fall Meeting, vol. O8.12, 2011.

N. Khan, G. Bakan, A. Gokirmak and H. Silva, “Analysis of Light Emission from Self-Heated Nanocrystalline Silicon Microwires,” Mat. Res. Soc. Fall Meeting, vol. W7.5, 2011.

N. E. Williams, A. Gokirmak and H. Silva, “Finite Element Simulations on Scaling Effects of Thermoelectric Generators,” Mat. Res. Soc. Fall Meeting, vol. F4.1, 2011.

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Senior undergraduates have designed and built a high-temperature Seebeck measurement setup making use of a commercial induction heater and mechanical pencils.

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Following talks have been given at MRS Spring 2010 meeting in San Francisco:
1. M. Akbulut, “Controlling Peripheral Leakage Currents in Ultra-narrow MOSFETs Using a Penta-Gate Approach,” I2.7, on April 7, 2010.
2. A. Cywar, “Electromigration of Liquid Silicon in Nanocrystalline Silicon Microwires During Phase-change Oscillations,” A8.5, on April 7, 2010.
3. A. Gokirmak, “Growth from Melt and Phase Change Oscillations in Silicon Micro- and Nano-wires,” P13.17, on April 8, 2010.
4. N. Williams, “Temperature Dependent Electrical Characterization and Crystallization of Nanocrystalline Silicon,” A17.9, on April 8, 2010.

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